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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() BUZ111SL-E3045A $0.88 | Infineon Technologies | N-CHANNEL POWER MOSFET | Bulk | TO-263 | Surface Mount | - | 175°C |
![]() BUZ111SLE3045A $0.88 | Siemens | MOSFET N-CH 50V 80A TO263 | Bulk | TO-263 | Surface Mount | - | 175°C |
| onsemi | MOSFET N-CH 50V 30A TO220-3 | Tube | TO-220-3 | Through Hole | - | -55°C ~ 150°C (TJ) | |
![]() BUZ21 $1.18 | Harris Corporation | MOSFET N-CH 100V 21A TO220AB | Tube | TO-220AB | Through Hole | SIPMOS® | - |
![]() BUZ22E3045A $0.66 | Infineon Technologies | N-CHANNEL POWER MOSFET | Bulk | - | - | * | - |
![]() BUZ30A $0.95 | Infineon Technologies | MOSFET N-CH 200V 21A TO220-3 | Tube | PG-TO220-3-1 | Through Hole | SIPMOS® | -55°C ~ 150°C (TJ) |
![]() BUZ30AH3045AATMA1 $1.79 | Infineon Technologies | MOSFET N-CH 200V 21A D2PAK | Tape & Reel (TR),Cut Tape (CT),Bulk | PG-TO263-3 | Surface Mount | SIPMOS® | -55°C ~ 150°C (TJ) |
| Infineon Technologies | MOSFET N-CH 200V 21A TO220-3 | Tube | PG-TO220-3-1 | Through Hole | SIPMOS® | -55°C ~ 150°C (TJ) |

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