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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() BUZ31 $0.79 | Infineon Technologies | MOSFET N-CH 200V 14.5A TO220-3 | Tube | PG-TO220-3 | Through Hole | SIPMOS® | -55°C ~ 150°C (TJ) |
![]() BUZ31 E3045A $0.68 | Infineon Technologies | MOSFET N-CH 200V 14.5A D2PAK | Tape & Reel (TR) | PG-TO263-3 | Surface Mount | SIPMOS® | -55°C ~ 150°C (TJ) |
![]() BUZ31 E3046 $0.73 | Infineon Technologies | MOSFET N-CH 200V 14.5A TO262-3 | Tape & Reel (TR) | PG-TO262-3 | Through Hole | SIPMOS® | -55°C ~ 150°C (TJ) |
![]() BUZ31 H3045A $0.99 | Infineon Technologies | MOSFET N-CH 200V 14.5A D2PAK | Tape & Reel (TR),Cut Tape (CT) | PG-TO263-3 | Surface Mount | SIPMOS® | -55°C ~ 150°C (TJ) |
![]() BUZ31H3046XKSA1 $0.63 | Infineon Technologies | MOSFET N-CH 200V 14.5A TO262-3 | Tube,Tube | PG-TO262-3-1 | Through Hole | SIPMOS® | -55°C ~ 150°C (TJ) |
![]() BUZ31HXKSA1 $0.75 | Infineon Technologies | MOSFET N-CH 200V 14.5A TO220-3 | Tube,Tube | PG-TO220-3 | Through Hole | SIPMOS® | -55°C ~ 150°C (TJ) |
![]() BUZ31L $0.81 | Infineon Technologies | MOSFET N-CH 200V 13.5A TO220-3 | Tube | PG-TO220-3 | Through Hole | SIPMOS® | -55°C ~ 150°C (TJ) |
| Infineon Technologies | MOSFET N-CH 200V 13.5A TO220-3 | Tape & Reel (TR) | PG-TO220-3-1 | Through Hole | SIPMOS® | -55°C ~ 150°C (TJ) |