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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() CGD65B130S2-T13 $6.15 | Cambridge GaN Devices | 650V GAN HEMT, 130MOHM, DFN5X6. | Tape & Reel (TR),Cut Tape (CT) | 8-DFN (5x6) | Surface Mount | ICeGaN™ | -55°C ~ 150°C (TJ) |
![]() CGD65B130SH2 $6.04 | Cambridge GaN Devices | 650V GAN HEMT, 130MOHM, DFN5X6. | Tape & Reel (TR),Cut Tape (CT) | 8-DFN (5x6) | Surface Mount | ICeGaN™ | -55°C ~ 150°C (TJ) |
![]() CGD65B200S2-T13 $4.75 | Cambridge GaN Devices | 650V GAN HEMT, 200MOHM, DFN5X6. | Tape & Reel (TR),Cut Tape (CT) | 8-DFN (5x6) | Surface Mount | ICeGaN™ | -55°C ~ 150°C (TJ) |
![]() CGD65B240SH2 $4.58 | Cambridge GaN Devices | 650V GAN HEMT, 240MOHM, DFN5X6. | Tape & Reel (TR),Cut Tape (CT) | 8-DFN (5x6) | Surface Mount | ICeGaN™ | -55°C ~ 150°C (TJ) |
![]() CGH09120F $254.28 | MACOM Technology Solutions | RF MOSFET HEMT 28V 440095 | Tray | 440095 | - | GaN | |
| MACOM Technology Solutions | RF MOSFET HEMT 28V 440162 | Tray | 440162 | Chassis Mount | GaN | ||
![]() CGH21240F $595.93 | MACOM Technology Solutions | RF MOSFET HEMT 28V 440117 | Tray | 440117 | Chassis Mount | GaN | |
![]() CGH25120F $568.44 | MACOM Technology Solutions | RF MOSFET HEMT 28V 440162 | Tray | 440162 | Chassis Mount | GaN |