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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() FF400R07KE4HOSA1 $91.41 | Infineon Technologies | IGBT MODULE 650V 1250W | Tray | Module | Chassis Mount | C | -40°C ~ 150°C |
![]() FF400R12KE3B2HOSA1 $132.42 | Infineon Technologies | IGBT MOD 1200V 580A 2000W | Tray | Module | Chassis Mount | C | -40°C ~ 125°C |
![]() FF400R12KE3HOSA1 $145.21 | Infineon Technologies | IGBT MOD 1200V 580A 2000W | Tray | Module | Chassis Mount | C | -40°C ~ 125°C (TJ) |
![]() FF400R12KE3S5HOSA1 $140.06 | Infineon Technologies | IGBT MODULE | Bulk | AG-62MM | Chassis Mount | - | -40°C ~ 125°C (TJ) |
![]() FF400R12KT3EHOSA1 $131.46 | Infineon Technologies | IGBT MOD 1200V 580A 2000W | Bulk,Tray | Module | Chassis Mount | C | -40°C ~ 125°C |
![]() FF400R12KT3HOSA1 $145.21 | Infineon Technologies | IGBT MOD 1200V 580A 2000W | Tray | Module | Chassis Mount | C | -40°C ~ 125°C |
![]() FF400R12KT3PEHOSA1 $135.86 | Infineon Technologies | IGBT MODULE 1200V 400A | Bulk,Tray | Module | Chassis Mount | C | -40°C ~ 125°C |
![]() FF400R12KT4HOSA1 $105.48 | Infineon Technologies | IGBT MODULE | Bulk | - | - | * | - |
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DF300R07PE4B6BOSA1View Product
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