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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() FF450R07ME4B11BOSA1 $105.06 | Infineon Technologies | MEDIUM POWER ECONO | Bulk | - | - | * | - |
![]() FF450R07ME4B11BPSA1 $99.48 | Infineon Technologies | MEDIUM POWER ECONO AG-ECONOD-411 | Tray | AG-ECONOD | Chassis Mount | EconoDUAL™ 3 | -40°C ~ 150°C (TJ) |
![]() FF450R07ME4BOSA1 $99.48 | Infineon Technologies | GBT MODULE 650V 450A | Bulk,Tray | AG-ECONOD-3 | Chassis Mount | EconoDUAL™ 3 | -40°C ~ 150°C (TJ) |
![]() FF450R12IE4BOSA2 $279.60 | Infineon Technologies | IGBT MOD 1200V 450A 2550W | Tray | Module | Chassis Mount | PrimePACK™2 | -40°C ~ 150°C |
![]() FF450R12KE4EHOSA1 $116.84 | Infineon Technologies | IGBT MOD 1200V 520A 2400W | Tray | Module | Chassis Mount | C | -40°C ~ 150°C |
![]() FF450R12KE4HOSA1 $116.84 | Infineon Technologies | IGBT MOD 1200V 520A 2400W | Tray | Module | Chassis Mount | C | -40°C ~ 150°C (TJ) |
![]() FF450R12KE4PHOSA1 $106.20 | Infineon Technologies | IGBT MODULE 1200V 450A | Tray | Module | Chassis Mount | C | -40°C ~ 150°C |
![]() FF450R12KE7EHPSA1 $110.06 | Infineon Technologies | MEDIUM POWER 62MM | Tray | - | - | - | - |
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