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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| Infineon Technologies | IGBT TRENCH FS 600V 80A TO247-3 | Tube | PG-TO247-3-1 | Through Hole | TrenchStop® | -40°C ~ 175°C (TJ) | |
![]() IKW75N60TFKSA1 $7.81 | Infineon Technologies | IGBT TRENCH FS 600V 80A TO247-3 | Tube | PG-TO247-3-1 | Through Hole | TrenchStop® | -40°C ~ 175°C (TJ) |
![]() IKW75N65EH5XKSA1 $6.21 | Infineon Technologies | IGBT TRENCH 650V 90A TO247-3 | Tube | PG-TO247-3 | Through Hole | TrenchStop™ | -40°C ~ 175°C (TJ) |
![]() IKW75N65EL5XKSA1 $6.44 | Infineon Technologies | IGBT 650V 80A TO247-3 | Tube | PG-TO247-3 | Through Hole | TrenchStop™ 5 | -40°C ~ 175°C (TJ) |
![]() IKW75N65ES5XKSA1 $5.70 | Infineon Technologies | IGBT TRENCH 650V 80A TO247-3 | Tube | PG-TO247-3 | Through Hole | TrenchStop™ | -40°C ~ 175°C (TJ) |
![]() IKW75N65ET7XKSA1 $4.84 | Infineon Technologies | IGBT TRENCH FS 650V 80A TO247-3 | Tube | PG-TO247-3 | Through Hole | TrenchStop™ | -40°C ~ 175°C (TJ) |
![]() IKW75N65RH5XKSA1 $8.13 | Infineon Technologies | IGBT TRENCH FS 650V 80A TO247-3 | Tube | PG-TO247-3 | Through Hole | TrenchStop™ 5 | -55°C ~ 175°C (TJ) |
![]() IKW75N65SS5XKSA1 $11.70 | Infineon Technologies | IGBT TRENCH FS 650V 80A TO247-3 | Tube | PG-TO247-3 | Through Hole | TrenchStop™ 5 | -40°C ~ 175°C (TJ) |