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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() BUK9E3R2-40B,127 $1.24 | Nexperia USA Inc. | MOSFET N-CH 40V 100A I2PAK | Tube | I2PAK | Through Hole | TrenchMOS™ | -55°C ~ 175°C (TJ) |
| NXP USA Inc. | MOSFET N-CH 40V 100A I2PAK | Tube | I2PAK | Through Hole | TrenchMOS™ | -55°C ~ 175°C (TJ) | |
![]() BUK9E4R4-40B,127 $1.34 | Nexperia USA Inc. | MOSFET N-CH 40V 75A I2PAK | Tube | I2PAK | Through Hole | TrenchMOS™ | -55°C ~ 175°C (TJ) |
![]() BUK9E4R4-80E,127 $1.40 | Nexperia USA Inc. | MOSFET N-CH 80V 120A I2PAK | Tube | I2PAK | Through Hole | TrenchMOS™ | -55°C ~ 175°C (TJ) |
![]() BUK9E4R9-60E,127 $0.68 | NXP USA Inc. | MOSFET N-CH 60V 100A I2PAK | Tube | I2PAK | Through Hole | TrenchMOS™ | -55°C ~ 175°C (TJ) |
![]() BUK9E6R1-100E,127 $1.40 | Nexperia USA Inc. | MOSFET N-CH 100V 120A I2PAK | Tube | I2PAK | Through Hole | TrenchMOS™ | -55°C ~ 175°C (TJ) |
| Nexperia USA Inc. | MOSFET N-CH 55V 28SO | Tape & Reel (TR) | 28-SO | Surface Mount | - | - | |
![]() BUK9J0R9-40HX $1.01 | Nexperia USA Inc. | BUK9J0R9-40H/SOT1023/4 LEADS | Tape & Reel (TR) | - | - | - | - |

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