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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Microchip TechnologyIGBT MODULE 600V 110A 416W SP4BulkSP4Chassis Mount--40°C ~ 150°C (TJ)
Microsemi CorporationIGBT MODULE 600V 110A 416W SP1BulkSP1Chassis Mount--
Microsemi CorporationIGBT MODULE 600V 110A 416W SP3BulkSP3Chassis Mount--
Microchip TechnologyIGBT MODULE 600V 120A 416W SP3BulkSP3Chassis Mount--
Microsemi CorporationIGBT MODULE 600V 110A 416W SP6PBulkSP6-PChassis Mount--40°C ~ 150°C (TJ)
Microsemi CorporationIGBT MODULE 1200V 40A 227W SP2BulkSP2Through Hole--
Microchip TechnologyIGBT MODULE 1200V 140A 517W SP6PBulkSP6-PChassis Mount--40°C ~ 175°C (TJ)
Microchip TechnologyIGBT MODULE 1200V 140A 517W SP6PBulkSP6-PChassis Mount--40°C ~ 175°C (TJ)
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