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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| Microchip Technology | IGBT MODULE 600V 110A 416W SP4 | Bulk | SP4 | Chassis Mount | - | -40°C ~ 150°C (TJ) | |
![]() APTGF90DA60CT1G $60.14 | Microsemi Corporation | IGBT MODULE 600V 110A 416W SP1 | Bulk | SP1 | Chassis Mount | - | - |
![]() APTGF90DH60T3G $31.16 | Microsemi Corporation | IGBT MODULE 600V 110A 416W SP3 | Bulk | SP3 | Chassis Mount | - | - |
![]() APTGF90H60T3G $44.33 | Microchip Technology | IGBT MODULE 600V 120A 416W SP3 | Bulk | SP3 | Chassis Mount | - | - |
![]() APTGF90TDU60PG $102.99 | Microsemi Corporation | IGBT MODULE 600V 110A 416W SP6P | Bulk | SP6-P | Chassis Mount | - | -40°C ~ 150°C (TJ) |
| Microsemi Corporation | IGBT MODULE 1200V 40A 227W SP2 | Bulk | SP2 | Through Hole | - | - | |
![]() APTGL120TA120TPG $187.97 | Microchip Technology | IGBT MODULE 1200V 140A 517W SP6P | Bulk | SP6-P | Chassis Mount | - | -40°C ~ 175°C (TJ) |
![]() APTGL120TDU120TPG $187.97 | Microchip Technology | IGBT MODULE 1200V 140A 517W SP6P | Bulk | SP6-P | Chassis Mount | - | -40°C ~ 175°C (TJ) |
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