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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Infineon TechnologiesIGBT TRENCH FS 650V 30A TO252-3Tape & Reel (TR),Cut Tape (CT)PG-TO252-3Surface MountTrenchStop™-40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT 1200V 3.2A TO220-3Tube,TubePG-TO220-3-1Through Hole--40°C ~ 150°C (TJ)
Infineon TechnologiesIGBT 1200V 9.6A TO220-3TubePG-TO220-3-1Through Hole--40°C ~ 150°C (TJ)
Infineon TechnologiesIGBT TRENCH FS 600V 12A TO220-3TubePG-TO220-3-1Through HoleTrenchStop®-40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT NPT FS 600V 20A TO220-3TubePG-TO220-3-1Through HoleTrenchStop®-40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT TRENCH FS 600V 30A TO220-3TubePG-TO220-3-1Through HoleTrenchStop®-40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT TRENCH FS 600V 40A TO220-3TubePG-TO220-3-1Through HoleTrenchStop®-40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT TRENCH 650V 42A TO220-3TubePG-TO220-3Through HoleTrenchStop™-40°C ~ 175°C (TJ)
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