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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Infineon TechnologiesIGBT 650V 42A TO220-3TubePG-TO220-3-1Through HoleTrenchStop®-
Infineon TechnologiesIGBT TRENCH FS 600V 60A TO220-3TubePG-TO220-3-1Through HoleTrenchStop®-40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT TRENCH 650V 55A TO220-3TubePG-TO220-3Through HoleTrenchStop™-40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT TRENCH 650V 55A TO220-3TubePG-TO220-3Through HoleTrenchStop™-40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT 650V 74A TO220-3TubePG-TO220-3Through HoleTrenchStop®-40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT 650V 74A TO220-3TubePG-TO220-3-1Through HoleTrenchStop®-40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT TRENCH FS 600V 100A TO220-3TubePG-TO220-3-1Through HoleTrenchStop®-40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT TRENCH 1200V 188A TO247-55TubePG-TO247-3-55Through HoleTRENCHSTOP™-40°C ~ 175°C (TJ)
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