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Single IGBTs
Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
Screen Default Ranking Price By Date
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
 IGW50N60TPXKSA1 $3.46 | Infineon Technologies | IGBT TRENCH FS 600V 80A TO247-3 | Tube | PG-TO247-3 | Through Hole | TrenchStop™ | -40°C ~ 175°C (TJ) |
IGW50N65F5AXKSA1 $2.88 | Infineon Technologies | IGBT TRENCH 650V 80A TO247-3 | Bulk,Tube | PG-TO247-3 | Through Hole | TrenchStop™ | -40°C ~ 175°C (TJ) |
IGW50N65F5FKSA1 $4.77 | Infineon Technologies | IGBT 650V 80A TO247-3 | Tube | PG-TO247-3 | Through Hole | TrenchStop® | -40°C ~ 175°C (TJ) |
IGW50N65H5AXKSA1 $2.92 | Infineon Technologies | IGBT TRENCH 650V 80A TO247-3 | Tube | PG-TO247-3 | Through Hole | TrenchStop™ | -40°C ~ 175°C (TJ) |
IGW50N65H5FKSA1 $4.18 | Infineon Technologies | IGBT 650V 80A TO247-3 | Tube | PG-TO247-3 | Through Hole | TrenchStop® | -40°C ~ 175°C (TJ) |
| Infineon Technologies | IGBT WITHOUT ANTI-PARALLEL DIODE | Bulk | - | - | * | - | |
IGW60N60H3FKSA1 $6.60 | Infineon Technologies | IGBT TRENCH 600V 80A TO247-3 | Tube | PG-TO247-3 | Through Hole | TrenchStop™ | -40°C ~ 175°C (TJ) |
| Infineon Technologies | IGBT TRENCH FS 1200V 100A TO247 | Tube | PG-TO247-3-1 | Through Hole | TrenchStop® | -40°C ~ 150°C (TJ) |
