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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Infineon TechnologiesIGBT NPT FS 1200V 50A TO247-3TubePG-TO247-3-1Through HoleTrenchStop®-40°C ~ 150°C (TJ)
Infineon TechnologiesIGBT TRENCH FS 1000V 60A TO247-3Tube,TubePG-TO247-3Through HoleTrenchStop®-55°C ~ 175°C (TJ)
Infineon TechnologiesIGBT TRENCH FS 600V 60A TO247-3TubePG-TO247-3-1Through HoleTrenchStop®-40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT TRENCH FS 600V 60A TO247-3TubePG-TO247-3-1Through HoleTrenchStop®-40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT TRENCH FS 600V 53A TO247-3TubePG-TO247-3Through HoleTrenchStop™-40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT 650V 85A TO247-3TubePG-TO247-3Through HoleTrenchStop™ 5-40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT TRENCH FS 1200V 80A TO247-3TubePG-TO247-3-1Through HoleTrenchStop®-40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT TRENCH FS 600V 80A TO247-3TubePG-TO247-3-1Through HoleTrenchStop®-40°C ~ 175°C (TJ)
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