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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
International RectifierIRG8P45N65 - 65V, 45A IGBTBulk----
International RectifierIGBT 1200V 80A TO-247ADBulkTO-247ADThrough Hole--40°C ~ 150°C (TJ)
International RectifierIGBT 1200V 80A TO-247ACBulkTO-247ACThrough Hole--40°C ~ 150°C (TJ)
International RectifierIGBT 1200V 100A TO-247ADBulkTO-247ADThrough Hole--40°C ~ 150°C (TJ)
Infineon TechnologiesIGBT 1200V 100A TO-247ACTubeTO-247ACThrough Hole--40°C ~ 150°C (TJ)
International RectifierIRG8P75N65 - 650V 75A, IGBTBulk----
International RectifierIRG8P75N65 - 650V 45A IGBTBulk----
Infineon TechnologiesIGBT NPT 600V 22A TO-220ABTubeTO-220ABThrough Hole--55°C ~ 150°C (TJ)
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