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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() IRG8P45N65UD1PBF $3.98 | International Rectifier | IRG8P45N65 - 65V, 45A IGBT | Bulk | - | - | - | - |
![]() IRG8P50N120KD-EPBF $5.98 | International Rectifier | IGBT 1200V 80A TO-247AD | Bulk | TO-247AD | Through Hole | - | -40°C ~ 150°C (TJ) |
![]() IRG8P50N120KDPBF $5.25 | International Rectifier | IGBT 1200V 80A TO-247AC | Bulk | TO-247AC | Through Hole | - | -40°C ~ 150°C (TJ) |
![]() IRG8P60N120KD-EPBF $6.36 | International Rectifier | IGBT 1200V 100A TO-247AD | Bulk | TO-247AD | Through Hole | - | -40°C ~ 150°C (TJ) |
| Infineon Technologies | IGBT 1200V 100A TO-247AC | Tube | TO-247AC | Through Hole | - | -40°C ~ 150°C (TJ) | |
![]() IRG8P75N65UD1-EPBF $3.23 | International Rectifier | IRG8P75N65 - 650V 75A, IGBT | Bulk | - | - | - | - |
![]() IRG8P75N65UD1PBF $3.10 | International Rectifier | IRG8P75N65 - 650V 45A IGBT | Bulk | - | - | - | - |
| Infineon Technologies | IGBT NPT 600V 22A TO-220AB | Tube | TO-220AB | Through Hole | - | -55°C ~ 150°C (TJ) |

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