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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() IRGB4059DPBF $1.00 | International Rectifier | IGBT TRENCH 600V 8A TO-220AB | Bulk | TO-220AB | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() IRGB4060DPBF $1.08 | International Rectifier | IGBT TRENCH 600V 16A TO-220AB | Bulk | TO-220AB | Through Hole | - | -55°C ~ 175°C (TJ) |
| Infineon Technologies | IGBT TRENCH 600V 36A TO-220AB | Tube | TO-220AB | Through Hole | - | -55°C ~ 175°C (TJ) | |
| Infineon Technologies | IGBT TRENCH 600V 48A TO-220AB | Tube | TO-220AB | Through Hole | - | -55°C ~ 175°C (TJ) | |
| Infineon Technologies | IGBT TRENCH 600V 20A TO-220AB | Tube | TO-220AB | Through Hole | - | -55°C ~ 175°C (TJ) | |
![]() IRGB4607DPBF $0.75 | International Rectifier | IGBT 600V 11A TO-220AB | Tube | TO-220AB | Through Hole | - | -40°C ~ 175°C (TJ) |
![]() IRGB4610DPBF $0.88 | Infineon Technologies | IGBT 600V 16A TO-220AB | Tube,Tube | TO-220AB | Through Hole | - | -40°C ~ 175°C (TJ) |
![]() IRGB4615DPBF $1.04 | International Rectifier | IGBT 600V 23A TO-220AB | Tube | TO-220AB | Through Hole | - | -40°C ~ 175°C (TJ) |

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