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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Infineon TechnologiesIGBT 600V 23A TO-220ABTubeTO-220ABThrough Hole--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT 600V 23A TO-220ABTubeTO-220ABThrough Hole--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT 600V 50A TO-220ABTubeTO-220ABThrough Hole--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT 600V 40A TO-220ABTubeTO-220ABThrough Hole--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT 900V 9A TO-220ABTubeTO-220ABThrough Hole--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT NPT 1200V 100A DIEBulkDieSurface Mount--
Infineon TechnologiesIGBT NPT 1200V 100A DIEBulkDieSurface Mount--
Infineon TechnologiesIGBT NPT 600V 100A DIEBulkDieSurface Mount--
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