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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Infineon TechnologiesIGBT 600V 32A TO-220ACBulk,TubeTO-220ACThrough Hole--40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT 600V 47A TO-220ACTubeTO-220ACThrough Hole--40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT 600V 65A TO-220ACTubeTO-220ACThrough Hole--55°C ~ 175°C (TJ)
International RectifierIGBT 650V 21A TO-220ABTubeTO-220ABThrough Hole--40°C ~ 175°C (TJ)
International RectifierIGBT NPT 600V 11A TO-220ABBulkTO-220ABThrough Hole--55°C ~ 175°C (TJ)
Infineon TechnologiesIGBT NPT 600V 12A TO-220ABBulk,TubeTO-220ABThrough Hole--55°C ~ 175°C (TJ)
Infineon TechnologiesIGBT NPT 1200V 12A TO-220ABTubeTO-220ABThrough Hole--55°C ~ 150°C (TJ)
Infineon TechnologiesIGBT NPT 600V 13A TO-220ABTubeTO-220ABThrough Hole--55°C ~ 150°C (TJ)
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