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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() APTM50UM09FAG $273.93 | Microchip Technology | MOSFET N-CH 500V 497A SP6 | Bulk | SP6 | Chassis Mount | - | -40°C ~ 150°C (TJ) |
![]() APTM50UM13SAG $209.09 | Microchip Technology | MOSFET N-CH 500V 335A SP6 | Bulk | SP6 | Chassis Mount | - | -40°C ~ 150°C (TJ) |
![]() APTM50UM19SG $103.91 | Microsemi Corporation | MOSFET N-CH 500V 163A MODULE | Bulk | Module | Chassis Mount | - | -40°C ~ 150°C (TJ) |
![]() APTM50UM25SG $93.01 | Microsemi Corporation | MOSFET N-CH 500V 149A MODULE | Bulk | Module | Chassis Mount | - | -40°C ~ 150°C (TJ) |
![]() APTML100U60R020T1AG $117.43 | Microchip Technology | MOSFET N-CH 1000V 20A SP1 | Bulk | SP1 | Chassis Mount | - | -40°C ~ 150°C (TJ) |
![]() AS1M025120P $26.58 | ANBON SEMICONDUCTOR (INT'L) LIMITED | N-CHANNEL SILICON CARBIDE POWER | Tube | TO-247-3 | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() AS1M025120T $31.29 | ANBON SEMICONDUCTOR (INT'L) LIMITED | N-CHANNEL SILICON CARBIDE POWER | Tube | TO-247-4 | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() AS1M040120T $19.30 | ANBON SEMICONDUCTOR (INT'L) LIMITED | N-CHANNEL SILICON CARBIDE POWER | Tube | TO-247-4 | Through Hole | - | -55°C ~ 150°C (TJ) |

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